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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 525V | |
| Continuous Drain Current at 25C | 7.5A (Ta) | |
| Max On-State Resistance | 920 mOhm @ 3.7A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 24nC @ 10V | |
| Input Cap at Vds | 600pF @ 30V | |
| Maximum Power Handling | 70W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-SMD, Flat Leads |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 7.5A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 525V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 24nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 600pF @ 30V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 3-SMD, Flat Leads that offers mechanical and thermal protection. Maximum power capability 70W for safeguarding the device. Maximum Rds(on) at Id 24nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 920 mOhm @ 3.7A, 10V for MOSFET specifications.
