Description

Is capable of sustaining a continuous drain current (Id) of 18A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60 V. Includes FET category defined as N-Channel. Ensures maximum 19 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 19 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 775 pF @ 20 V at Vds to protect the device. The input capacitance is specified at 775 pF @ 20 V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Type of package TO-220ML that preserves the integrity of the device. The maximum power dissipation 2W (Ta), 20W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 19 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 55mOhm @ 9A, 10V for MOSFET specifications. Supplier package type TO-220ML for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category.