Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 75.04000 | ₹ 75,04,000.00 |
| 10000 | ₹ 89.89000 | ₹ 8,98,900.00 |
| 1000 | ₹ 100.57000 | ₹ 1,00,570.00 |
| 500 | ₹ 108.58000 | ₹ 54,290.00 |
| 100 | ₹ 121.04000 | ₹ 12,104.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 800V | |
| Continuous Drain Current at 25C | 2.5A (Ta) | |
| Max On-State Resistance | 4.8 Ohm @ 1.3A, 15V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 15nC @ 10V | |
| Input Cap at Vds | 550pF @ 20V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 2.5A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 800V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 15nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 550pF @ 20V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Maximum Rds(on) at Id 15nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4.8 Ohm @ 1.3A, 15V for MOSFET specifications.
