Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 26.24000 | ₹ 26,24,000.00 |
| 10000 | ₹ 31.32000 | ₹ 3,13,200.00 |
| 1000 | ₹ 35.13000 | ₹ 35,130.00 |
| 500 | ₹ 38.09000 | ₹ 19,045.00 |
| 100 | ₹ 42.32000 | ₹ 4,232.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 12A (Ta) | |
| Max On-State Resistance | 135 mOhm @ 6A, 10V | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | 21nC @ 10V | |
| Input Cap at Vds | 1020pF @ 20V | |
| Maximum Power Handling | 2W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 12A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Maintains 21nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1020pF @ 20V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 Full Pack that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Maximum Rds(on) at Id 21nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 135 mOhm @ 6A, 10V for MOSFET specifications.