Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1080 | ₹ 349.32000 | ₹ 3,77,265.60 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 3 N and 3 P-Channel (3 Phase Inverter) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 6A (Ta) | |
| Max On-State Resistance | 220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 320pF @ 10V, 790pF @ 10V | |
| Maximum Power Handling | 4W (Ta), 29W (Tc) | |
| Ambient Temp Range | 150°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP | |
| Vendor Package Type | 12-SIP |
Description
Configured in a manner identified as 3 N and 3 P-Channel (3 Phase Inverter). Is capable of sustaining a continuous drain current (Id) of 6A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. The maximum input capacitance reaches 320pF @ 10V, 790pF @ 10V at Vds to protect the device. The input capacitance is specified at 320pF @ 10V, 790pF @ 10V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 12-SIP that offers mechanical and thermal protection. Type of package 12-SIP that preserves the integrity of the device. Maximum power capability 4W (Ta), 29W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V for MOSFET specifications. Supplier package type 12-SIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2V @ 250µA for MOSFET threshold specifications.
