Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1080 | ₹ 234.73000 | ₹ 2,53,508.40 |
| 540 | ₹ 237.09000 | ₹ 1,28,028.60 |
| 180 | ₹ 265.97000 | ₹ 47,874.60 |
| 10 | ₹ 393.29000 | ₹ 3,932.90 |
| 1 | ₹ 584.73000 | ₹ 584.73 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tube | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 4 N-Channel | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 7A | |
| Max On-State Resistance | 100mOhm @ 3.5A, 10V | |
| Max Threshold Gate Voltage | 2V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 660pF @ 10V | |
| Maximum Power Handling | 4.8W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 15-SIP | |
| Vendor Package Type | 15-SIP |
Description
Configured in a manner identified as 4 N-Channel. Is capable of sustaining a continuous drain current (Id) of 7A at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. The maximum input capacitance reaches 660pF @ 10V at Vds to protect the device. The input capacitance is specified at 660pF @ 10V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 15-SIP that offers mechanical and thermal protection. Type of package 15-SIP that preserves the integrity of the device. Maximum power capability 4.8W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 100mOhm @ 3.5A, 10V for MOSFET specifications. Supplier package type 15-SIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2V @ 250µA for MOSFET threshold specifications.
