Attribute
Description
Manufacturer Part Number
SLA5064
Description
MOSFET 3N/3P-CH 60V 10A 12SIP
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 145

Quantity Unit Price Ext. Price
92 ₹ 291.27000 ₹ 26,796.84
69 ₹ 324.88000 ₹ 22,416.72
53 ₹ 336.08000 ₹ 17,812.24
39 ₹ 347.29000 ₹ 13,544.31
25 ₹ 358.48000 ₹ 8,962.00
11 ₹ 436.90000 ₹ 4,805.90

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
180 ₹ 514.48000 ₹ 92,606.40
10 ₹ 726.68000 ₹ 7,266.80
1 ₹ 1,046.64000 ₹ 1,046.64

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 3 N and 3 P-Channel (3-Phase Bridge)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 60V
Continuous Drain Current at 25C 10A
Max On-State Resistance 140mOhm @ 5A, 4V
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Max Input Cap at Vds 460pF @ 10V, 1200pF @ 10V
Maximum Power Handling 5W
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 12-SIP Exposed Tab
Vendor Package Type 12-SIP

Description

Configured in a manner identified as 3 N and 3 P-Channel (3-Phase Bridge). Is capable of sustaining a continuous drain current (Id) of 10A at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 460pF @ 10V, 1200pF @ 10V at Vds to protect the device. The input capacitance is specified at 460pF @ 10V, 1200pF @ 10V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 12-SIP Exposed Tab that offers mechanical and thermal protection. Type of package 12-SIP that preserves the integrity of the device. Maximum power capability 5W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 140mOhm @ 5A, 4V for MOSFET specifications. Supplier package type 12-SIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category.