Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 200 | ₹ 276.38000 | ₹ 55,276.00 |
| 100 | ₹ 279.46000 | ₹ 27,946.00 |
| 50 | ₹ 294.59000 | ₹ 14,729.50 |
| 10 | ₹ 330.19000 | ₹ 3,301.90 |
Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1080 | ₹ 386.04000 | ₹ 4,16,923.20 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 3 N and 3 P-Channel (3-Phase Bridge) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 6A | |
| Max On-State Resistance | 220mOhm @ 3A, 4V | |
| Max Threshold Gate Voltage | - | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 320pF @ 10V, 790pF @ 10V | |
| Maximum Power Handling | 5W | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 12-SIP Exposed Tab | |
| Vendor Package Type | 12-SIP |
Description
Configured in a manner identified as 3 N and 3 P-Channel (3-Phase Bridge). Is capable of sustaining a continuous drain current (Id) of 6A at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 320pF @ 10V, 790pF @ 10V at Vds to protect the device. The input capacitance is specified at 320pF @ 10V, 790pF @ 10V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 12-SIP Exposed Tab that offers mechanical and thermal protection. Type of package 12-SIP that preserves the integrity of the device. Maximum power capability 5W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 220mOhm @ 3A, 4V for MOSFET specifications. Supplier package type 12-SIP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category.
