Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 5.5A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 4nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 4nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 450pF @ 15V at Vds to protect the device. The input capacitance is specified at 450pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerUDFN that offers mechanical and thermal protection. Type of package HUML2020L8 that preserves the integrity of the device. Maximum power capability 2W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 4nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 42mOhm @ 5A, 4.5V for MOSFET specifications. Supplier package type HUML2020L8 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 1mA for MOSFET threshold specifications.