Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 2A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 12V. Ensures maximum 7.6nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 7.6nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 850pF @ 6V at Vds to protect the device. The input capacitance is specified at 850pF @ 6V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-SMD, Flat Leads that offers mechanical and thermal protection. Type of package TUMT6 that preserves the integrity of the device. Maximum power capability 910mW (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 7.6nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 105mOhm @ 2A, 4.5V for MOSFET specifications. Supplier package type TUMT6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1mA for MOSFET threshold specifications.