Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 1.5A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V, 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 1.6nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 1.6nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 80pF @ 10V at Vds to protect the device. The input capacitance is specified at 80pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 Thin, TSOT-23-6 that offers mechanical and thermal protection. Type of package TSMT6 (SC-95) that preserves the integrity of the device. Maximum power capability 1.25W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 1.6nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 230mOhm @ 1.5A, 4.5V for MOSFET specifications. Supplier package type TSMT6 (SC-95) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 1mA for MOSFET threshold specifications.