Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 9A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 12nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 12nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1400pF @ 10V at Vds to protect the device. The input capacitance is specified at 1400pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-SMD, Flat Leads that offers mechanical and thermal protection. Type of package TSMT8 that preserves the integrity of the device. Maximum power capability 1.5W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 12nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 17mOhm @ 7A, 4.5V for MOSFET specifications. Supplier package type TSMT8 for component selection. Maximum Vgs(th) at Id 1.5V @ 1mA for MOSFET threshold specifications.