Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 3.5A (Ta), 10A (Tc), 4A (Ta), 11.5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Ensures maximum 3.1nC @ 10V, 17.1nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 3.1nC @ 10V, 17.1nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 135pF @ 30V at Vds to protect the device. The input capacitance is specified at 135pF @ 30V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerVDFN that offers mechanical and thermal protection. Type of package 8-HSMT (3.2x3) that preserves the integrity of the device. Maximum power capability 2W (Ta), 13W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 3.1nC @ 10V, 17.1nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 90mOhm @ 3.5A, 10V, 97mOhm @ 4A, 10V for MOSFET specifications. Supplier package type 8-HSMT (3.2x3) for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold specifications.