Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 7A, 11A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 11.1nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 11.1nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 500pF @ 15V at Vds to protect the device. The input capacitance is specified at 500pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-UDFN Exposed Pad that offers mechanical and thermal protection. Type of package HSML3030L10 that preserves the integrity of the device. Maximum power capability 2W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 11.1nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 17.9mOhm @ 7A, 10V for MOSFET specifications. Supplier package type HSML3030L10 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold specifications.