Description

Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 10nC @ 10V, 36nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 10nC @ 10V, 36nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 590pF @ 15V, 2410pF @ 15V at Vds to protect the device. The input capacitance is specified at 590pF @ 15V, 2410pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package 8-HSOP that preserves the integrity of the device. Maximum power capability 3W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 10nC @ 10V, 36nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V for MOSFET specifications. Supplier package type 8-HSOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold specifications.