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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 1A (Ta) | |
| Max On-State Resistance | 390 mOhm @ 1A, 4.5V | |
| Max Threshold Gate Voltage | 2V @ 1mA | |
| Gate Charge at Vgs | 2.1nC @ 4.5V | |
| Input Cap at Vds | 150pF @ 10V | |
| Maximum Power Handling | 700mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TUMT5 |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 1A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Maintains 2.1nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 150pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TUMT5 that offers mechanical and thermal protection. Maximum power capability 700mW for safeguarding the device. Maximum Rds(on) at Id 2.1nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 390 mOhm @ 1A, 4.5V for MOSFET specifications. Maximum Vgs(th) at Id 2V @ 1mA for MOSFET threshold specifications.
