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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | SiCFET N-Channel, Silicon Carbide | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 22A (Tc) | |
| Max On-State Resistance | 208 mOhm @ 7A, 18V | |
| Max Threshold Gate Voltage | 4V @ 2.5mA | |
| Gate Charge at Vgs | 62nC @ 18V | |
| Input Cap at Vds | 1200pF @ 800V | |
| Maximum Power Handling | 165W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Assesses resistance at forward current SiCFET N-Channel, Silicon Carbide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 22A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Includes FET category defined as SiCFET N-Channel, Silicon Carbide. Maintains 62nC @ 18V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1200pF @ 800V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Maximum power capability 165W for safeguarding the device. Maximum Rds(on) at Id 62nC @ 18V for MOSFET performance. Maximum Rds(on) at Id and Vgs 208 mOhm @ 7A, 18V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 2.5mA for MOSFET threshold specifications.
