Attribute
Description
Manufacturer Part Number
RCD080N25TL
Manufacturer
Description
--
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 250V | |
| Continuous Drain Current at 25C | 8A (Ta) | |
| Max On-State Resistance | - | |
| Max Threshold Gate Voltage | - | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 20W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-428 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 8A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 250V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-428 that offers mechanical and thermal protection. Maximum power capability 20W for safeguarding the device.
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