Attribute
Description
Manufacturer Part Number
RCD080N25TL
Manufacturer
Description
--
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 250V
Continuous Drain Current at 25C 8A (Ta)
Max On-State Resistance -
Max Threshold Gate Voltage -
Gate Charge at Vgs -
Input Cap at Vds -
Maximum Power Handling 20W
Attachment Mounting Style Surface Mount
Component Housing Style SOT-428

Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 8A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 250V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-428 that offers mechanical and thermal protection. Maximum power capability 20W for safeguarding the device.