Attribute
Description
Manufacturer Part Number
XP0487800L
Description
MOSFET 2N-CH 50V 0.1A SMINI6
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 50V
Continuous Drain Current at 25C 100mA
Max On-State Resistance 12Ohm @ 10mA, 4V
Max Threshold Gate Voltage 1.5V @ 1µA
Max Gate Charge at Vgs -
Max Input Cap at Vds 12pF @ 3V
Maximum Power Handling 150mW
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type SMINI6-G1

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 100mA at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 12pF @ 3V at Vds to protect the device. The input capacitance is specified at 12pF @ 3V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SMINI6-G1 that preserves the integrity of the device. Maximum power capability 150mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 12Ohm @ 10mA, 4V for MOSFET specifications. Supplier package type SMINI6-G1 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 1µA for MOSFET threshold specifications.