Attribute
Description
Manufacturer Part Number
MTM763200LBF
Description
MOSFET N/P-CH 20V 1.9A WSMINI6
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function -
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 1.9A, 1.2A
Max On-State Resistance 105mOhm @ 1A, 4V
Max Threshold Gate Voltage 1.3V @ 1mA
Max Gate Charge at Vgs -
Max Input Cap at Vds 280pF @ 10V
Maximum Power Handling 700mW
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-SMD, Flat Leads
Vendor Package Type WSMini6-F1-B

Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 1.9A, 1.2A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. The maximum input capacitance reaches 280pF @ 10V at Vds to protect the device. The input capacitance is specified at 280pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 6-SMD, Flat Leads that offers mechanical and thermal protection. Type of package WSMini6-F1-B that preserves the integrity of the device. Maximum power capability 700mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 105mOhm @ 1A, 4V for MOSFET specifications. Supplier package type WSMini6-F1-B for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold specifications.