Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 4 N-Channel (Full Bridge). Is capable of sustaining a continuous drain current (Id) of 149A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 407nC @ 18V gate charge at Vgs for improved switching efficiency. Maintains 407nC @ 18V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 9090pF @ 800V at Vds to protect the device. The input capacitance is specified at 9090pF @ 800V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tray for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package 34-PIM (56.7x42.5) that preserves the integrity of the device. Maximum power capability 353W (Tj) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 407nC @ 18V for MOSFET performance. Maximum Rds(on) at Id and Vgs 10mOhm @ 120A, 18V for MOSFET specifications. Supplier package type 34-PIM (56.7x42.5) for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 4.4V @ 60mA for MOSFET threshold specifications.