Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 18A (Ta), 84A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 11nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 11nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 1300pF @ 25V at Vds to protect the device. The input capacitance is specified at 1300pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Type of package 8-DFN (5x6) Dual Flag (SO8FL-Dual) that preserves the integrity of the device. Maximum power capability 3W (Ta), 50W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 11nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4.7mOhm @ 10A, 10V for MOSFET specifications. Supplier package type 8-DFN (5x6) Dual Flag (SO8FL-Dual) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.2V @ 40µA for MOSFET threshold specifications.