Description

Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Ensures maximum 7.2nC @ 4.5V, 21.5nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 7.2nC @ 4.5V, 21.5nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1180pF @ 13V, 3603pF @ 13V at Vds to protect the device. The input capacitance is specified at 1180pF @ 13V, 3603pF @ 13V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerWDFN that offers mechanical and thermal protection. Type of package 8-PQFN (5x6) that preserves the integrity of the device. Maximum power capability 960mW (Ta), 1W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 7.2nC @ 4.5V, 21.5nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V for MOSFET specifications. Supplier package type 8-PQFN (5x6) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2V @ 250µA, 2V @ 800µA for MOSFET threshold specifications.