Description

Configured in a manner identified as 2 N-Channel (Dual) Asymmetrical. Is capable of sustaining a continuous drain current (Id) of 13A, 26A at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Offers FET traits classified as Logic Level Gate. Ensures maximum 8nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 8nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1075pF @ 13V at Vds to protect the device. The input capacitance is specified at 1075pF @ 13V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Tape & Reel (TR)Cut Tape (CT)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerWDFN that offers mechanical and thermal protection. Type of package Powerclip-33 that preserves the integrity of the device. Maximum power capability 800mW, 900mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 8nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 7mOhm @ 12A, 4.5V for MOSFET specifications. Classification series for the product or component PowerTrench®. Supplier package type Powerclip-33 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold specifications.