Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 1.13A (Ta) | |
| Max On-State Resistance | 200 mOhm @ 1.95A, 10V | |
| Max Threshold Gate Voltage | 3V @ 250µA | |
| Gate Charge at Vgs | 10nC @ 10V | |
| Input Cap at Vds | 200pF @ 15V | |
| Maximum Power Handling | 400mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 1.13A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Maintains 10nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 200pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 400mW for safeguarding the device. Maximum Rds(on) at Id 10nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 200 mOhm @ 1.95A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 3V @ 250µA for MOSFET threshold specifications.
