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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 2A (Tc) | |
| Max On-State Resistance | 6 Ohm @ 1A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Gate Charge at Vgs | 27nC @ 10V | |
| Input Cap at Vds | 1183pF @ 25V | |
| Maximum Power Handling | 75W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 2A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 500V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Maintains 27nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1183pF @ 25V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Maximum power capability 75W for safeguarding the device. Maximum Rds(on) at Id 27nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 6 Ohm @ 1A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.
