Attribute
Description
Manufacturer Part Number
SI9936DY,518
Manufacturer
Description
MOSFET 2N-CH 30V 5A 8SO
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line TrenchMOS™
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 5A
Max On-State Resistance 50mOhm @ 5A, 10V
Max Threshold Gate Voltage 1V @ 250µA
Max Gate Charge at Vgs 35nC @ 10V
Max Input Cap at Vds -
Maximum Power Handling 900mW
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SO

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 5A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 35nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 35nC @ 10V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SO that preserves the integrity of the device. Maximum power capability 900mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 35nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 50mOhm @ 5A, 10V for MOSFET specifications. Classification series for the product or component TrenchMOS™. Supplier package type 8-SO for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.