Stock:
Distributor: 118
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 358 | ₹ 44.50000 | ₹ 15,931.00 |
| 70 | ₹ 49.84000 | ₹ 3,488.80 |
| 1 | ₹ 106.80000 | ₹ 106.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 100A (Tmb) | |
| Max On-State Resistance | 1.25 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 1.95V @ 1mA | |
| Gate Charge at Vgs | 78nC @ 10V | |
| Input Cap at Vds | 5093pF @ 15V | |
| Maximum Power Handling | 215W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-100, SOT-669, 4-LFPAK |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 100A (Tmb) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 78nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 5093pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-100, SOT-669, 4-LFPAK that offers mechanical and thermal protection. Maximum power capability 215W for safeguarding the device. Maximum Rds(on) at Id 78nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.25 mOhm @ 25A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 1.95V @ 1mA for MOSFET threshold specifications.
