Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5000 | ₹ 75.20000 | ₹ 3,76,000.00 |
| 2500 | ₹ 75.95000 | ₹ 1,89,875.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 47A | |
| Max On-State Resistance | 25 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 61nC @ 10V | |
| Input Cap at Vds | 2600pF @ 25V | |
| Maximum Power Handling | 150W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 47A at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 61nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 2600pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 that offers mechanical and thermal protection. Maximum power capability 150W for safeguarding the device. Maximum Rds(on) at Id 61nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 25 mOhm @ 25A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 1mA for MOSFET threshold specifications.
