Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 64.56000 | ₹ 64,56,000.00 |
| 10000 | ₹ 77.06000 | ₹ 7,70,600.00 |
| 1000 | ₹ 86.43000 | ₹ 86,430.00 |
| 500 | ₹ 93.45000 | ₹ 46,725.00 |
| 100 | ₹ 104.13000 | ₹ 10,413.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 8.7A | |
| Max On-State Resistance | 400 mOhm @ 4.5A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 24nC @ 10V | |
| Input Cap at Vds | 959pF @ 25V | |
| Maximum Power Handling | 88W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 8.7A at 25°C. Supports a Vdss drain-to-source voltage rated at 200V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 24nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 959pF @ 25V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Maximum power capability 88W for safeguarding the device. Maximum Rds(on) at Id 24nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 400 mOhm @ 4.5A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 1mA for MOSFET threshold specifications.
