Attribute
Description
Manufacturer Part Number
BUK9535-55A,127
Manufacturer
Description
MOSFET N-CH 55V 34A TO220AB
Manufacturer Lead Time
52 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 55V
Continuous Drain Current at 25C 34A
Max On-State Resistance 32 mOhm @ 25A, 10V
Max Threshold Gate Voltage 2V @ 1mA
Gate Charge at Vgs -
Input Cap at Vds 1173pF @ 25V
Maximum Power Handling 85W
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 34A at 25°C. Supports a Vdss drain-to-source voltage rated at 55V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 1173pF @ 25V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Maximum power capability 85W for safeguarding the device. Maximum Rds(on) at Id and Vgs 32 mOhm @ 25A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 2V @ 1mA for MOSFET threshold specifications.