Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 410mA at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 1.2nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 1.2nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 43.2pF @ 15V at Vds to protect the device. The input capacitance is specified at 43.2pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-XFDFN Exposed Pad that offers mechanical and thermal protection. Type of package DFN1010B-6 that preserves the integrity of the device. Maximum power capability 285mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 1.2nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.4Ohm @ 410mA, 4.5V for MOSFET specifications. Supplier package type DFN1010B-6 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 950mV @ 250µA for MOSFET threshold specifications.