Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 200mA at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 0.44nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.44nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 20pF @ 10V at Vds to protect the device. The input capacitance is specified at 20pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-563, SOT-666 that offers mechanical and thermal protection. Type of package SOT-666 that preserves the integrity of the device. Maximum power capability 260mW for safeguarding the device. Product status Not For New Designs concerning availability and lifecycle. Maximum Rds(on) at Id 0.44nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 4.5Ohm @ 100mA, 10V for MOSFET specifications. Supplier package type SOT-666 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.