Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 30A at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Offers FET traits classified as Logic Level Gate. Ensures maximum 15.7nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 15.7nC @ 5V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 2110pF @ 25V at Vds to protect the device. The input capacitance is specified at 2110pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-1205, 8-LFPAK56 that offers mechanical and thermal protection. Type of package LFPAK56D that preserves the integrity of the device. Maximum power capability 53W for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q100 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 15.7nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 8mOhm @ 10A, 10V for MOSFET specifications. Classification series for the product or component TrenchMOS™. Supplier package type LFPAK56D for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.1V @ 1mA for MOSFET threshold specifications.