Stock:
Distributor: 116
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 48000 | ₹ 38.07000 | ₹ 18,27,360.00 |
| 24000 | ₹ 38.27000 | ₹ 9,18,480.00 |
| 12000 | ₹ 38.63000 | ₹ 4,63,560.00 |
| 6000 | ₹ 39.67000 | ₹ 2,38,020.00 |
| 3000 | ₹ 41.93000 | ₹ 1,25,790.00 |
Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 50.18000 | ₹ 1,50,540.00 |
| 1500 | ₹ 54.29000 | ₹ 81,435.00 |
| 100 | ₹ 113.88000 | ₹ 11,388.00 |
| 50 | ₹ 126.86000 | ₹ 6,343.00 |
| 10 | ₹ 167.14000 | ₹ 1,671.40 |
| 1 | ₹ 260.77000 | ₹ 260.77 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 260.77000 | ₹ 260.77 |
| 10 | ₹ 167.32000 | ₹ 1,673.20 |
| 50 | ₹ 127.27000 | ₹ 6,363.50 |
| 100 | ₹ 113.92000 | ₹ 11,392.00 |
| 250 | ₹ 80.19000 | ₹ 20,047.50 |
| 1500 | ₹ 80.01000 | ₹ 1,20,015.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchMOS™ | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 26A | |
| Max On-State Resistance | 31mOhm @ 5A, 10V | |
| Max Threshold Gate Voltage | 2.1V @ 1mA | |
| Max Gate Charge at Vgs | 27.3nC @ 5V | |
| Max Input Cap at Vds | 3168pF @ 25V | |
| Maximum Power Handling | 64W | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | Automotive | |
| Certification Qualification | AEC-Q100 | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-1205, 8-LFPAK56 | |
| Vendor Package Type | LFPAK56D |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 26A at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Offers FET traits classified as Logic Level Gate. Ensures maximum 27.3nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 27.3nC @ 5V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 3168pF @ 25V at Vds to protect the device. The input capacitance is specified at 3168pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-1205, 8-LFPAK56 that offers mechanical and thermal protection. Type of package LFPAK56D that preserves the integrity of the device. Maximum power capability 64W for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q100 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 27.3nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 31mOhm @ 5A, 10V for MOSFET specifications. Classification series for the product or component TrenchMOS™. Supplier package type LFPAK56D for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.1V @ 1mA for MOSFET threshold specifications.
