Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 40A at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 32.3nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 32.3nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 2210pF @ 25V at Vds to protect the device. The input capacitance is specified at 2210pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-1205, 8-LFPAK56 that offers mechanical and thermal protection. Type of package LFPAK56D that preserves the integrity of the device. Maximum power capability 68W for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q100 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 32.3nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 5.8mOhm @ 20A, 10V for MOSFET specifications. Supplier package type LFPAK56D for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 4V @ 1mA for MOSFET threshold specifications.