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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel Complementary | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 600mA, 500mA | |
| Max On-State Resistance | 620mOhm @ 600mA, 4.5V | |
| Max Threshold Gate Voltage | 950mV @ 250µA | |
| Max Gate Charge at Vgs | 0.7nC @ 4.5V | |
| Max Input Cap at Vds | 21.3pF @ 10V | |
| Maximum Power Handling | 265mW | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-XFDFN Exposed Pad | |
| Vendor Package Type | DFN1010B-6 |
Description
Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as N and P-Channel Complementary. Is capable of sustaining a continuous drain current (Id) of 600mA, 500mA at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 0.7nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.7nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 21.3pF @ 10V at Vds to protect the device. The input capacitance is specified at 21.3pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-XFDFN Exposed Pad that offers mechanical and thermal protection. Type of package DFN1010B-6 that preserves the integrity of the device. Maximum power capability 265mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 0.7nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 620mOhm @ 600mA, 4.5V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type DFN1010B-6 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 950mV @ 250µA for MOSFET threshold specifications.
