Attribute
Description
Manufacturer Part Number
BUK9MJT-55PRF,518
Manufacturer
Description
MOSFET 2N-CH 55V 20SO
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 55V
Continuous Drain Current at 25C -
Max On-State Resistance 13.8mOhm @ 10A, 10V
Max Threshold Gate Voltage -
Max Gate Charge at Vgs -
Max Input Cap at Vds -
Maximum Power Handling -
Ambient Temp Range -
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 20-SOIC (0.295", 7.50mm Width)
Vendor Package Type 20-SO

Description

Configured in a manner identified as 2 N-Channel (Dual). Supports a Vdss drain-to-source voltage rated at 55V. Offers FET traits classified as Logic Level Gate. Mounting configuration Surface Mount for structural stability. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 20-SOIC (0.295", 7.50mm Width) that offers mechanical and thermal protection. Type of package 20-SO that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 13.8mOhm @ 10A, 10V for MOSFET specifications. Supplier package type 20-SO for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category.