Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 1000V (1kV) | |
| Continuous Drain Current at 25C | 5A (Tc) | |
| Max On-State Resistance | 2.8 Ohm @ 3A, 10V | |
| Max Threshold Gate Voltage | 5V @ 500µA | |
| Gate Charge at Vgs | 43nC @ 10V | |
| Input Cap at Vds | 1409pF @ 25V | |
| Maximum Power Handling | 225W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1000V (1kV). Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 43nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 1409pF @ 25V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Maximum power capability 225W for safeguarding the device. Maximum Rds(on) at Id 43nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 2.8 Ohm @ 3A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 5V @ 500µA for MOSFET threshold specifications.
