Attribute
Description
Manufacturer Part Number
2N7335
Manufacturer
Description
MOSFET P-CH QUAD 100V MO-036AB
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 750mA (Tc) | |
| Max On-State Resistance | 1.4 Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 1.4W | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 750mA (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Maximum power capability 1.4W for safeguarding the device. Maximum Rds(on) at Id and Vgs 1.4 Ohm @ 500mA, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.
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