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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 1.69A (Tc) | |
| Max On-State Resistance | 2.6 Ohm @ 1.07A, 5V | |
| Max Threshold Gate Voltage | 2V @ 1mA | |
| Gate Charge at Vgs | 1nC @ 5V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 8.33W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-205AF |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 1.69A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 1nC @ 5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-205AF that offers mechanical and thermal protection. Maximum power capability 8.33W for safeguarding the device. Maximum Rds(on) at Id 1nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 2.6 Ohm @ 1.07A, 5V for MOSFET specifications. Maximum Vgs(th) at Id 2V @ 1mA for MOSFET threshold specifications.
