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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | 4 N-Channel (Three Level Inverter) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 28A (Tc) | |
| Max On-State Resistance | 98mOhm @ 20A, 20V | |
| Max Threshold Gate Voltage | 2.2V @ 1mA | |
| Max Gate Charge at Vgs | 49nC @ 20V | |
| Max Input Cap at Vds | 950pF @ 1000V | |
| Maximum Power Handling | 125W | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SP3 | |
| Vendor Package Type | SP3 |
Description
Configured in a manner identified as 4 N-Channel (Three Level Inverter). Is capable of sustaining a continuous drain current (Id) of 28A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 49nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 49nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 950pF @ 1000V at Vds to protect the device. The input capacitance is specified at 950pF @ 1000V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case SP3 that offers mechanical and thermal protection. Type of package SP3 that preserves the integrity of the device. Maximum power capability 125W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 49nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 98mOhm @ 20A, 20V for MOSFET specifications. Supplier package type SP3 for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 2.2V @ 1mA for MOSFET threshold specifications.
