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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | 6 N-Channel (3-Phase Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 220A (Tc) | |
| Max On-State Resistance | 12mOhm @ 150A, 20V | |
| Max Threshold Gate Voltage | 2.4V @ 30mA (Typ) | |
| Max Gate Charge at Vgs | 483nC @ 20V | |
| Max Input Cap at Vds | 8400pF @ 1000V | |
| Maximum Power Handling | 925W | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SP6 | |
| Vendor Package Type | SP6-P |
Description
Configured in a manner identified as 6 N-Channel (3-Phase Bridge). Is capable of sustaining a continuous drain current (Id) of 220A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 483nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 483nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 8400pF @ 1000V at Vds to protect the device. The input capacitance is specified at 8400pF @ 1000V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case SP6 that offers mechanical and thermal protection. Type of package SP6-P that preserves the integrity of the device. Maximum power capability 925W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 483nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 12mOhm @ 150A, 20V for MOSFET specifications. Supplier package type SP6-P for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 2.4V @ 30mA (Typ) for MOSFET threshold specifications.
