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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Core Technology Platform | Silicon Carbide (SiC) | |
| Setup Arrangement | 2 N-Channel (Half Bridge) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 55A (Tc) | |
| Max On-State Resistance | 49mOhm @ 40A, 20V | |
| Max Threshold Gate Voltage | 2.2V @ 2mA (Typ) | |
| Max Gate Charge at Vgs | 98nC @ 20V | |
| Max Input Cap at Vds | 1900pF @ 1000V | |
| Maximum Power Handling | 250W | |
| Ambient Temp Range | -40°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SP1 | |
| Vendor Package Type | SP1 |
Description
Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 55A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 1200V (1.2kV). Ensures maximum 98nC @ 20V gate charge at Vgs for improved switching efficiency. Maintains 98nC @ 20V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1900pF @ 1000V at Vds to protect the device. The input capacitance is specified at 1900pF @ 1000V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case SP1 that offers mechanical and thermal protection. Type of package SP1 that preserves the integrity of the device. Maximum power capability 250W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 98nC @ 20V for MOSFET performance. Maximum Rds(on) at Id and Vgs 49mOhm @ 40A, 20V for MOSFET specifications. Supplier package type SP1 for component selection. The primary technology platform Silicon Carbide (SiC) linked to the product category. Maximum Vgs(th) at Id 2.2V @ 2mA (Typ) for MOSFET threshold specifications.
