Description

Configured in a manner identified as 6 N-Channel (3-Phase Bridge). Is capable of sustaining a continuous drain current (Id) of 108A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 200V. Ensures maximum 161nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 161nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 10700pF @ 50V at Vds to protect the device. The input capacitance is specified at 10700pF @ 50V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 125°C (Tc) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package SP3X that preserves the integrity of the device. Maximum power capability 341W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 161nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 9.7mOhm @ 81A, 10V for MOSFET specifications. Supplier package type SP3X for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 5V @ 250µA for MOSFET threshold specifications.