Stock:
Distributor: 110
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25000 | ₹ 0.10000 | ₹ 2,500.00 |
| 10000 | ₹ 0.11000 | ₹ 1,100.00 |
| 5000 | ₹ 0.12000 | ₹ 600.00 |
| 2500 | ₹ 0.12000 | ₹ 300.00 |
| 1000 | ₹ 0.13000 | ₹ 130.00 |
| 1 | ₹ 0.14000 | ₹ 0.14 |
Stock:
Distributor: 115
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25000 | ₹ 0.10000 | ₹ 2,500.00 |
| 10000 | ₹ 0.11000 | ₹ 1,100.00 |
| 5000 | ₹ 0.12000 | ₹ 600.00 |
| 2500 | ₹ 0.12000 | ₹ 300.00 |
| 1000 | ₹ 0.13000 | ₹ 130.00 |
| 1 | ₹ 0.14000 | ₹ 0.14 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 25V | |
| Continuous Drain Current at 25C | 54A (Tc) | |
| Max On-State Resistance | 13.5 mOhm @ 10A, 10V | |
| Max Threshold Gate Voltage | 1.7V @ 250µA | |
| Gate Charge at Vgs | 8nC @ 4.5V | |
| Input Cap at Vds | 400pF @ 12.5V | |
| Maximum Power Handling | 2.2W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 54A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 8nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 400pF @ 12.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 8-PowerTDFN that offers mechanical and thermal protection. Maximum power capability 2.2W for safeguarding the device. Maximum Rds(on) at Id 8nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 13.5 mOhm @ 10A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 1.7V @ 250µA for MOSFET threshold specifications.
