Description

Configured in a manner identified as 4 N-Channel (Full Bridge). Is capable of sustaining a continuous drain current (Id) of 46A at 25°C. Supports a Vdss drain-to-source voltage rated at 500V. Ensures maximum 123nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 123nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 5600pF @ 25V at Vds to protect the device. The input capacitance is specified at 5600pF @ 25V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case SP4 that offers mechanical and thermal protection. Type of package SP4 that preserves the integrity of the device. Maximum power capability 357W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 123nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 90mOhm @ 23A, 10V for MOSFET specifications. Supplier package type SP4 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 5V @ 2.5mA for MOSFET threshold specifications.