Description

Configured in a manner identified as 6 N-Channel (3-Phase Bridge). Is capable of sustaining a continuous drain current (Id) of 22A at 25°C. Supports a Vdss drain-to-source voltage rated at 1000V (1kV). Ensures maximum 186nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 186nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 5200pF @ 25V at Vds to protect the device. The input capacitance is specified at 5200pF @ 25V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case Module that offers mechanical and thermal protection. Type of package SP6-P that preserves the integrity of the device. Maximum power capability 390W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 186nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 420mOhm @ 11A, 10V for MOSFET specifications. Classification series for the product or component POWER MOS 7®. Supplier package type SP6-P for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 5V @ 2.5mA for MOSFET threshold specifications.