Description

Configured in a manner identified as 3 N Channel (Phase Leg + Boost Chopper). Is capable of sustaining a continuous drain current (Id) of 49A at 25°C. Supports a Vdss drain-to-source voltage rated at 600V. Ensures maximum 150nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 150nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 7200pF @ 25V at Vds to protect the device. The input capacitance is specified at 7200pF @ 25V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case SP1 that offers mechanical and thermal protection. Type of package SP1 that preserves the integrity of the device. Maximum power capability 250W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 150nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 45mOhm @ 24.5A, 10V for MOSFET specifications. Classification series for the product or component CoolMOS™. Supplier package type SP1 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3.9V @ 3mA for MOSFET threshold specifications.