Attribute
Description
Manufacturer Part Number
SIX3439KA-TP
Description
MOSFET N/P-CH 20V 0.75A SOT563
Manufacturer Lead Time
18 weeks
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
150000 ₹ 5.42000 ₹ 8,13,000.00
75000 ₹ 6.03000 ₹ 4,52,250.00
30000 ₹ 6.13000 ₹ 1,83,900.00
21000 ₹ 6.38000 ₹ 1,33,980.00
15000 ₹ 6.53000 ₹ 97,950.00
9000 ₹ 6.56000 ₹ 59,040.00
6000 ₹ 7.54000 ₹ 45,240.00
3000 ₹ 8.28000 ₹ 24,840.00
1000 ₹ 9.82000 ₹ 9,820.00
500 ₹ 11.04000 ₹ 5,520.00
100 ₹ 14.80000 ₹ 1,480.00
10 ₹ 23.41000 ₹ 234.10
1 ₹ 38.07000 ₹ 38.07

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 38.27000 ₹ 38.27
10 ₹ 26.43000 ₹ 264.30
100 ₹ 16.46000 ₹ 1,646.00
500 ₹ 11.39000 ₹ 5,695.00
1000 ₹ 9.97000 ₹ 9,970.00
3000 ₹ 8.54000 ₹ 25,620.00
6000 ₹ 7.83000 ₹ 46,980.00
9000 ₹ 6.14000 ₹ 55,260.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 750mA, 600mA
Max On-State Resistance 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V
Max Threshold Gate Voltage 1.1V @ 250µA
Max Gate Charge at Vgs 0.8nC @ 4.5V, 0.86nC @ 4.5V
Max Input Cap at Vds 33pF @ 16V, 40pF @ 16V
Maximum Power Handling 150mW
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-563, SOT-666
Vendor Package Type SOT-563

Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 750mA, 600mA at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 0.8nC @ 4.5V, 0.86nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.8nC @ 4.5V, 0.86nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 33pF @ 16V, 40pF @ 16V at Vds to protect the device. The input capacitance is specified at 33pF @ 16V, 40pF @ 16V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-563, SOT-666 that offers mechanical and thermal protection. Type of package SOT-563 that preserves the integrity of the device. Maximum power capability 150mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 0.8nC @ 4.5V, 0.86nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 300mOhm @ 500mA, 4.5V, 850mOhm @ 500mA, 4.5V for MOSFET specifications. Supplier package type SOT-563 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.1V @ 250µA for MOSFET threshold specifications.